Boron doped graphene synthesis using pulsed laser deposition and its electrochemical characterization

During the design of graphene (G), their electronic, chemical and electrochemical properties among others can be tuned by incorporating heteroatoms in honeycomb structure. In this study, we investigated boron doped (BG) synthesis effect content on property graphene. To end, BG was synthesized using pulsed laser deposition (PLD) with carbon as solid sources, followed rapid thermal annealing presence nickel catalyst. Raman spectroscopy revealed that films consisted few-layer doping increased defects level films. X-ray photoelectron confirmed successful into control content. Electrochemical characterization demonstrated electrodes exhibit higher reversibility electron transfer constant than G electrode. All these results prove PLD method is a viable alternative way to produce excellent properties.